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| MA R 2 3 1 0 The item can replace AP2310GN Approved by: Checked by: Issued by: SPECIFICATION PRODUCT: POWER MOSFET MODEL: MA R 2 3 1 0 SOT 2 3 HOPE MICROELECTRONIC CO.,LIMITED Tel:+86-755-82973805 Fax:+86-755-82973550 E-mail: sales@hoperf.com Page 1 of 5 http://www.hoperf.com POWER MOSFET Simple Drive Requirement Small Package Outline Surface Mount Device S D MAR2310 60V 90m 3A BVDSS RDS(ON) ID SOT-23 G Description MARKING:2310 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 60 20 3 2.3 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W 2 Tel: +86-755-82973805 Fax: +86-755-82973550 E-mail: sales@hoperf.com http://www.hoperf.com POWER MOSFET MAR2310 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.05 5 6 1.6 3 6 5 16 3 490 55 40 Max. Units 90 120 3 10 25 100 10 780 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=5V, ID=3A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS=20V ID=3A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3,VGS=10V RD=30 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.2A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/s Min. - Typ. 25 26 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. 3 Tel: +86-755-82973805 Fax: +86-755-82973550 E-mail: sales@hoperf.com http://www.hoperf.com POWER MOSFET MAR2310 10 10 T A =25 C 8 o ID , Drain Current (A) 10V 7.0V 5.0V 4.5V ID , Drain Current (A) V G = 3.0 V T A = 150 o C 8 10V 7.0V 5.0V 4.5V V G = 3.0 V 6 6 4 4 2 2 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 105 2.0 ID=2A 99 1.8 T A =25 C 1.6 o ID=3A V G =10V RDS(ON) (m ) 93 Normalized R DS(ON) 1.4 1.2 87 1.0 81 0.8 75 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 3 1.2 2 Normalized VGS(th) (V) 1.0 IS(A) T j =150 o C 1 T j =25 o C 0.8 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 Tel: +86-755-82973805 Fax: +86-755-82973550 E-mail: sales@hoperf.com http://www.hoperf.com POWER MOSFET MAR2310 f=1.0MHz 14 1000 VGS , Gate to Source Voltage (V) 12 ID=3A V DS = 30 V V DS =38V V DS =48V C iss 10 8 C (pF) 100 6 4 C oss C rss 2 0 0 3 6 9 12 15 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100.000 1 Duty factor=0.5 10.000 Normalized Thermal Response (Rthja) 0.2 100us 1.000 0.1 0.1 0.05 ID (A) 1ms 10ms 100ms 1s DC 0.01 PDM t T 0.100 0.01 Single Pulse 0.010 T A =25 o C Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270/W 0.001 0.001 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG QGS QGD 4.5V 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 5 Tel: +86-755-82973805 Fax: +86-755-82973550 E-mail: sales@hoperf.com http://www.hoperf.com |
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